Room temperature magneto-optic effect in silicon light-emitting diodes

In weakly spin-orbit coupled materials, the spin-selective nature of recombination can give rise to large magnetic-field effects, for example on electro-luminescence from molecular semiconductors. While silicon has weak spin-orbit coupling, observing spin-dependent recombination through magneto-electroluminescence is challenging due to the inefficiency of emission due to silicon's indirect band-gap, and to the difficulty in separating spin-dependent phenomena from classical magneto-resistance effects. Here we overcome these challenges to measure magneto-electroluminescence in silicon light-emitting diodes fabricated via gas immersion laser doping. These devices allow us to achieve efficient emission while retaining a well-defined geometry thus suppressing classical magnetoresistance effects to a few percent. We find that electroluminescence can be enhanced by up to 300\% near room temperature in a seven Tesla magnetic field showing that the control of the spin degree of freedom can have a strong impact on the efficiency of silicon LEDs

The role of intermolecular coupling in the photophysics of disordered organic semiconductors: Aggregate emission in regioregular polythiophene

We address the role of excitonic coulping on the nature of photoexcitations in the conjugated polymer regioregular poly(3-hexylthiophene). By means of temperature-dependent absorption and photoluminescence spectroscopy, we show that optical emission is overwhelmingly dominated by weakly coupled H-aggregates. The relative absorbance of the 0-0 and 0-1 vibronic peaks provides a powerfully simple means to extract the magnitude of the intermolecular coupling energy, approximately 5 and 30 meV for films spun from isodurene and chloroform solutions respectively.Comment: 10 pages, 4 figures, published in Phys. Rev. Let

Spectroscopy of Seven Cataclysmic Variables with Periods Above Five Hours

We present spectroscopy of seven cataclysmic variable stars with orbital periods P(orb) greater than 5 hours, all but one of which are known to be dwarf novae. Using radial velocity measurements we improve on previous orbital period determinations, or derive periods for the first time. The stars and their periods are TT Crt, 0.2683522(5) d; EZ Del, 0.2234(5) d; LL Lyr, 0.249069(4) d; UY Pup, 0.479269(7) d; RY Ser, 0.3009(4) d; CH UMa, 0.3431843(6) d; and SDSS J081321+452809, 0.2890(4) d. For each of the systems we detect the spectrum of the secondary star, estimate its spectral type, and derive a distance based on the surface brightness and Roche lobe constraints. In five systems we also measure the radial velocity curve of the secondary star, estimate orbital inclinations, and where possible estimate distances based on the MV(max) vs.P(orb) relation found by Warner. In concordance with previous studies, we find that all the secondary stars have, to varying degrees, cooler spectral types than would be expected if they were on the main sequence at the measured orbital period.Comment: 25 pages, 2 figures, accepted for Publications of the Astronomical Society of the Pacifi

Transport Properties of Highly Aligned Polymer Light-Emitting-Diodes

We investigate hole transport in polymer light-emitting-diodes in which the emissive layer is made of liquid-crystalline polymer chains aligned perpendicular to the direction of transport. Calculations of the current as a function of time via a random-walk model show excellent qualitative agreement with experiments conducted on electroluminescent polyfluorene demonstrating non-dispersive hole transport. The current exhibits a constant plateau as the charge carriers move with a time-independent drift velocity, followed by a long tail when they reach the collecting electrode. Variation of the parameters within the model allows the investigation of the transition from non-dispersive to dispersive transport in highly aligned polymers. It turns out that large inter-chain hopping is required for non-dispersive hole transport and that structural disorder obstructs the propagation of holes through the polymer film.Comment: 4 pages, 5 figure

Analysis of deep levels in a phenylenevinylene polymer by transient capacitance methods

Transient capacitance methods were applied to the depletion region of an abrupt asymmetric n(+) -p junction of silicon and unintentionally doped poly[2-methoxy, 5 ethyl (2' hexyloxy) paraphenylenevinylene] (MEH-PPV). Studies in the temperature range 100-300 K show the presence of a majority-carrier trap at 1.0 eV and two minority traps at 0.7 and 1.3 eV, respectively. There is an indication for more levels for which the activation energy could not be determined. Furthermore, admittance data reveal a bulk activation energy for conduction of 0.12 eV, suggesting the presence of an additional shallow acceptor state. (C) 1999 American Institute of Physics. [S0003-6951(99)02308-6]

Growing Lettuce in the Lower Rio Grande Valley.

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Advanced information processing system: The Army fault tolerant architecture conceptual study. Volume 1: Army fault tolerant architecture overview

Digital computing systems needed for Army programs such as the Computer-Aided Low Altitude Helicopter Flight Program and the Armored Systems Modernization (ASM) vehicles may be characterized by high computational throughput and input/output bandwidth, hard real-time response, high reliability and availability, and maintainability, testability, and producibility requirements. In addition, such a system should be affordable to produce, procure, maintain, and upgrade. To address these needs, the Army Fault Tolerant Architecture (AFTA) is being designed and constructed under a three-year program comprised of a conceptual study, detailed design and fabrication, and demonstration and validation phases. Described here are the results of the conceptual study phase of the AFTA development. Given here is an introduction to the AFTA program, its objectives, and key elements of its technical approach. A format is designed for representing mission requirements in a manner suitable for first order AFTA sizing and analysis, followed by a discussion of the current state of mission requirements acquisition for the targeted Army missions. An overview is given of AFTA's architectural theory of operation

Advanced information processing system: The Army fault tolerant architecture conceptual study. Volume 2: Army fault tolerant architecture design and analysis

Described here is the Army Fault Tolerant Architecture (AFTA) hardware architecture and components and the operating system. The architectural and operational theory of the AFTA Fault Tolerant Data Bus is discussed. The test and maintenance strategy developed for use in fielded AFTA installations is presented. An approach to be used in reducing the probability of AFTA failure due to common mode faults is described. Analytical models for AFTA performance, reliability, availability, life cycle cost, weight, power, and volume are developed. An approach is presented for using VHSIC Hardware Description Language (VHDL) to describe and design AFTA's developmental hardware. A plan is described for verifying and validating key AFTA concepts during the Dem/Val phase. Analytical models and partial mission requirements are used to generate AFTA configurations for the TF/TA/NOE and Ground Vehicle missions

Gate-induced band ferromagnetism in an organic polymer

We propose that a chain of five-membered rings (polyaminotriazole) should be ferromagnetic with an appropriate doping that is envisaged to be feasible with an FET structure. The ferromagnetism is confirmed by a spin density functional calculation, which also shows that ferromagnetism survives the Peierls instability. We explain the magnetism in terms of Mielke and Tasaki's flat-band ferromagnetism with the Hubbard model. This opens a new possibility of band ferromagnetism in purely organic polymers.Comment: 4 pages, 7 figure